| PART |
Description |
Maker |
| SN102 |
Reliable Power Semiconductor Thyristors
|
Semiconductors
|
| SN104 |
Reliable Power Semiconductor Thyristors
|
Semiconductors LTD
|
| LDC12-36-R35 LDC12-18-R70 LDV12-12-1R0 LDV12-15-R8 |
INNOVATING RELIABLE POWER
|
TDK Electronics
|
| MAP5506 MAP55-4004 MAP40-1005 MAP55-1012 MAP55-102 |
power supplies provides reliable, tightly-regulated DC
|
POWER-ONE[Power-One]
|
| CS80-10IO2 |
Power Semiconductor Data Book 1976
|
ABB Group
|
| BCR20A BCR20B BCR20C BCR20E |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE
|
Mitsubishi Electric Corporation
|
| T345N |
European Power- Semiconductor and Electronics Company
|
eupec GmbH
|
| 684PMB152KP1 505PMS850KS 305PMB102K 225PMB102K 335 |
Polypropylene Film Capacitors for Power Semiconductor Circuits
|
Illinois Capacitor, Inc.
|
| 239-75AB 239-75AB-03 239-75AB-04 235-85AB-01 235-8 |
BOARD LEVEL POWER SEMICONDUCTOR HEAT SINKS
|
List of Unclassifed Manufacturers
|
| CR02 CR02AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| IPI60R380C6 IPA60R380C6 IPP60R380C6 IPB60R380C6 IP |
10.6 A, 600 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
Metal Oxide Semiconductor Field Effect Transistor
|
Infineon Technologies AG
|
| CR2AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
